论文名称 |
作者（排序） |
发表刊物名称 |
发表日期 |
影响因子 |
A thermal boundary resistance measurement method based on a designed chip with the heat source separated from the temperature sensor |
Xuan Li,Shiwei Feng,ect。 第二作者、通讯作者 |
Applied Physics Letters |
2023.02.13 |
3.971 |
Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method |
Shijie Pan,Shiwei Feng ect. 第二作者、通讯作者 |
Applied Physics Letters |
2022.10.10 |
3.971 |
Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method |
Shijie Pan,Shiwei Feng ect。 第二作者、通讯作者. |
IEEE Transactions on Electron Devices |
2022.09.01 |
3.221 |
Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method |
Shijie Pan,Shiwei Feng,ect。 第二作者、通讯作者 |
IEEE Transactions on Electron Devices |
2021.09.06 |
3.221 |
A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage |
Xuan Li, Shiwei Feng,ect。 第二作者、通讯作者. |
IEEE Transactions on Electron Devices |
2020.12.01 |
3.221 |
Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base-Collector Voltage Drop at Low Current |
Bangbing Shi, Shiwei Feng, ect。 第二作者、通讯作者 |
IEEE Transactions on Power Electronics |
2019.01.21 |
5.967 |
Junction Temperature Measurement Method for Power mosfets Using Turn-On Delay of Impulse Signal |
Bangbing Shi,Shiwei Feng，ect。 第二作者、通讯作者 |
IEEE Transactions on Power Electronics |
2017.08.07 |
5.967 |
A New Differential Amplitude Spectrum for Analyzing the Trapping Effect in GaN HEMTs Based on the Drain Current Transient |
Xiang Zheng,Shiwei Feng,ect。 第二作者、通讯作者 |
IEEE Transactions on Electron Devices |
2017.02.24 |
3.221 |
Variation of Dominant Degradation Mechanism in AlGaN Barrier Layer With Different Voltage Stress on the Gate of AlGaN/GaN High Electron Mobility Transistors |
Lei Shi,Shiwei Feng,ect。 第二作者、通讯作者 |
IEEE Electron Device Letters |
2015.02.03 |
4.816 |
Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs |
Yamin Zhang,Shiwei Feng,ect。 第二作者、通讯作者 |
IEEE Electron Device Letters |
2014.01.31 |
4.816 |
