研究方向

一直致力于半导体光电探测器和激光器芯片的研制，以及探测芯片后续电路设计，涉及材料物理，器件物理，工艺物理，测试表征、模拟电路等研究方向。

个人简介

李冲，教授，博士生导师

教育简历

2009.09-2014.07，中国科学院半导体研究所，微电子与固体电子学，博士

2005.09-2009.07，北京理工大学，光电学院，电子科学与技术专业，学士

工作履历

2014.7~ 今 2138CC太阳集团

学术兼职

1.Photonics期刊optoelectronics and Optical Materials单元（三区IF：2.536）特邀编辑

2.Light: Science & Applications（一区top期刊IF：20.275）审稿人

课程教学

本科生教学：电磁场理论课程

科研项目

先后主持国家和省部级项目14项，包括：国家自然科学基金面上项目，科技部863计划，军委项目，北京市基金，北京市教委项目等

荣誉和获奖

1.2022年获得“中国光学工程学会科技创新奖”一等奖

2.指导2020年2138cc太阳集团优秀硕士毕业论文1篇

3.指导2021年2138cc太阳集团优秀硕士毕业论文1篇

主要成果

在Opt. & Laser Technol.,OLT、APL、IEEE TED、JLT、Scientific Report等术刊物上第一（通讯）作者发表SCI学术论文24篇，申请国家发明专利21项，授权15项，成果转换3项。毕业学生入职中科院微电子所，中电50所，中电11所，北方华创等单位，指导的学生多位获得国家奖学金和校级优秀毕业生称号。

主要论文论著

1.Liu Y F ,Li C, Zhang C H ,et al. “Droplet-Shaped-Mesa Vertical-Cavity Surface-Emitting Laser Arrays With Narrow Linewidth and Small Beam Divergence”. Lightwave Technology, Journal of, 43(12):5756-5761 (2025).

2.Chong Li, Ruixi Liu, et al “Resonant effect and models of InP-based photodiode” Optics & Laser Technology, Volume 175, August 2024, 110831 (2024).

2.Chong Li, Xinyuan Gao, et al. “Influence of photonic crystals on the performance parameters of GeSn vertical-structure photodiodes”, Optics & Laser Technology 163, 109375 (2023)

3.Chong Li, Kai Bao, et al. “Grating-enabled high-speed high-efficiency surface-illuminated silicon photodiodes”, Opt. Express 29(3), 3458-3464 (2021)

4.Huang R,Li C, et al. Investigation of interface states between GaAs and Si₃N₄after He+ implantation[J]. Journal of Radioanalytical and Nuclear Chemistry, 327, 905–911 (2021）

5.S. Qin,Chong Li, et al. All-Si Large-Area Photodetectors with Bandwidth of More Than 10 GHz. IEEE Transactions on Electron Devices, 66(12), 5187-5190, 2019.

6.Li C, Qin S, Li B, et al. Enhancement of responsivity and speed in waveguide Ge/Si avalanche photodiode with separate vertical Ge absorption, lateral Si charge and multiplication configuration. Optical and Quantum Electronics, 51(7): 219, 2019.

7.Wang C,Li C, Dai J, et al. (2019). "Thermal analysis of VCSEL arrays based on first principal theory and finite element method." Optical and Quantum Electronics 51(6): 196, 2019

8.Du X.,Li C,Li B., et al. “High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers.” Chinese Physics B, 2019, 28(6): 064208

9.C Li, B. Li, S. Qin, J. et al, “Effects of interface states on Ge-on-SOI photodiodes”, IEEE Journal of the Electron Devices Society, 7: 7-12, 2018.

10.YJ Feng ,C Li，QL Liu, HQ Wang, et al. “Scalability of dark current in silicon PIN photodiode”, Chin. Phys. B, 27(4): 048501, 2018

11.He X,Li C, Hu Z, et al. Ultrahigh birefringent nonlinear silicon-core microfiber with two zero-dispersion wavelengths. Journal of the Optical Society of America B, 35(1): 122-126, 2018