（一作为本人指导的研究生）

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2．Zheng X, Feng* S, et al,Photocurrents in GaN-based HEMTs: Theoretical model and experimental results ,Applied Physics Letters, 2019, 21: 213505-213508.

3. Bangbing Shi, Shiwei Feng*, Yamin Zhang, Kun Bai, Yuxuan Xiao, Lei Shi, Hui Zhu, Chunsheng Guo. Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base-Collector Voltage Drop at Low Current.IEEE Transaction on Power Electronics, 2019, 34(10): 10136-10142.

4. Shi B, Feng* S, Shi L, et al. Junction Temperature Measurement Method for Power mosfets Using Turn-On Delay of Impulse Signal[J].IEEE Transactions on Power Electronics,2018, 33(6): 5274-5282.

5. Zhang, S. Y.,Feng*, S. W.,etal. (2017).Applied Physics Letters,110(22), 3721.