个人简介

张亚民，男，1985年生，教授/博士生导师；国基金/北京市基金/中国电子学会科学技术奖评审专家；北京市科委/山东科技计划项目会评专家；《微纳电子与智能制造》杂志编委；北京市知识产权法院兼职技术调查官；IEEE TPE/TED/ EDL等学术刊物审稿人。作为项目负责人主持国家自然科学基金面上项目，北京市自然科学基金小米创新联合基金等项目20余项；近五年以第一作者或通讯作者在APL、IEEE TPE、TIM、TED、EDL等杂志发表SCI论文50余篇，获北京市科学技术奖技术发明二等奖等科技奖励3项，北京市高等教育教学成果奖1项。

招生方向

招生方向：微电子器件可靠性物理

研究兴趣：宽禁带功率器件；半导体器件温升检测、散热优化与失效分析。

招生专业：电子科学与技术（学博、学硕），

电子信息-集成电路工程（专博、专硕）

招生计划：预计每年招收博士生1-3人，硕士生3人

主要项目

1.GaN基微波功率器件三维温度表征及异质界面温升特性研究，国家自然科学基金-面上项目，62074009，主持

2. 基于峰值谱技术的GaN基HEMT器件陷阱演化特征及物理机制研究，国家自然科学基金青年项目，41804006，主持

3.消费级PoP封装芯片热阻构成分析及散热优化方法研究，北京市自然科学基金-小米创新联合基金，L233023，主持

4.GaN基HEMT器件微区结构损伤表征及内在物理机制研究，北京市自然科学基金面上项目，4192012，主持

5.GaN基纵向双极型晶体管物理模型研究，重点研发子课题，2022YFB3604304，主持

代表性论文

1.X. Meng, C. Guo, Y. Hao, S. Feng, X. Zheng, andY. Zhang（通讯）,"High Time-Resolution Transient Current-Based Characterization System for Traps in SiC MOSFET,"IEEE Transactions on Instrumentation and Measurement,vol. 74, ,3003809:1-7, 2025.

2.X. Meng, C. Guo, Q. Wen, S. Feng, andY. Zhang（通讯），"Evolution of Gate-Oxide Interface Traps in Planar SiC MOSFET Under Repeated Short-Circuit Stress,"IEEE Transactions on Electron Devices,pp. 1-7, 2025.

3.X. Meng, M. Zhang, S. Feng, Y. Tang, andY. Zhang（通讯）, "Online Temperature Measurement Method for SiC MOSFET Device Based on Gate Pulse,"IEEE Transactions on Power Electronics, vol. 39, pp. 4714-4724, 2024.

4.C. Guo, S. Cui, Y. Li, B. Yao,Y. Zhang（通讯）, H. Zhu, M. Zhang, and S. Feng, "Study of the Influence of Different Gate Oxide Traps on Threshold Voltage Drift of SiC MOSFET Based on Transient Current,"IEEE Transactions on Power Electronics, vol. 39, pp. 9629-9637, 2024.

5.S. Jiang, M. Zhang, X. Meng, X. Zheng, S. Feng, andY. Zhang（通讯）, "Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current,"IEEE Transactions on Power Electronics, vol. 38, pp. 6555-6565, 2023.

6.X. Meng, M. Zhang, K. Duan, X. Zheng, Y. Zhai, S. Feng, andY. Zhang（通讯）, "Research on Transient Temperature Rise Measurement Method for Semiconductor Devices Based on Photothermal Reflection,"IEEE Transactions on Instrumentation and Measurement, vol. 72, pp. 1-9, 2023.

7.S. Pan,Y. Zhang（通讯）, S. Feng, X. Li, K. Bai, X. Lu, M. Zhang, and Z. Zhou, "Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs,"IEEE Transactions on Electron Devices, vol. 70, pp. 3475-3482, 2023.

8.B. Shi, S. Feng,Y. Zhang（通讯）, K. Bai, Y. Xiao, L. Shi, H. Zhu, and C. Guo, "Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base–Collector Voltage Drop at Low Current,"IEEE Transactions on Power Electronics, vol. 34, pp. 10136-10142, 2019.

9.Y. Zhang, S. Feng, H. Zhu, C. Guo, Y. Qiao, J. Shao, and X. Han, "Study of Heat Transport Behavior in GaN-Based Transistors by Schottky Characteristics Method,"IEEE Transactions on Electron Devices, vol. 64, pp. 2166-2171, 2017.

10.Y. Zhang, S. Feng, H. Zhu, C. Guo, B. Deng, and G. Zhang, "Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs,"IEEE Electron Device Letters, vol. 35, pp. 345-347, 2014.

联系方式

电子邮箱：yaminzhang@bjut.edu.cn(报考前先联系)