代表性成果
部分期刊论文：
1.PengyingChang*, Guowei Ma, Mengyao Xie, Zishuo Guo, and Lang Zeng*, “A Physics-Based Model of Two-Dimensional Ferroelectric Tunnel Junction with Monolayer and Multilayer Graphene Electrodes”IEEE Electron Device Letters, vol. 46, no. 9, pp. 1636-1639, Sep. 2025.
2.PengyingChang*, Yirong Guo,Mengyao Xie, Jie Li, Yiyang Xie*, and Lang Zeng*, “Topological Polarization Dynamics and Domain -Wall Tunneling Electroresistance Effects in Cylindrical-Shell Ferroelectrics,”IEEE Electron Device Letters, vol. 46, no. 2, pp. 179-182,Feb. 2025.
3.Pengying Chang*, and Yiyang Xie*, “Evaluation of HfO2-Based Ferroelectric Resonant Tunnel Junction by Band Engineering,”IEEE Electron Device Letters, vol. 44, no. 1, pp. 168-171, Jan. 2023.
4.PengyingChang, Gang Du, Jinfeng Kang, and Xiaoyan Liu*, “Conduction Mechanisms of Metal-Ferroelectric-Insulator-Semiconductor Tunnel Junction on N- and P-Type Semiconductor,”IEEE Electron Device Letters,vol. 42, no. 1, pp. 119-121, Jan. 2021.
5.Pengying Chang*, Xiaoyan Liu, Fei Liu, and Gang Du, “Phonon-Limited Mobility in n-Type Few-Layer InSe Devices From First Principles,”IEEE Electron Device Letters, vol. 40, no. 2, pp. 333-336,Feb.2019.
6.PengyingChang, Mengqi Fan, Gang Du, Xiaoyan Liu*, and Yiyang Xie*, “Intrinsic variations of ultrathin hafnium oxide-based ferroelectric tunnel junctions induced by ferroelectric-dielectric phase fluctuations,”Science China: Information Sciences,vol. 66, pp. 209402:1-209402-2, Oct. 2023
7.PengyingChang, Gang Du, and Xiaoyan Liu*, “Design space for stabilized negative capacitance in HfO2ferroelectric-dielectric stacks based on phase field simulation,”Science China: Information Sciences,vol. 64, no. 2, pp. 122402, Jan. 2021.
8.PengyingChang*, Jie Li, Yirong Guo, Yiyang Xie*, and Lang Zeng, “Physical Modeling of Resonant Tunneling in Ferroelectric Tunnel Junctions with Multiple Quantum Well Superlattice Heterostructures,”IEEE Transactions on Electron Devices, vol. 71, no. 3, pp. 2210-2216, Mar. 2024.
9.Pengying Chang*, and Yiyang Xie*, “Ferroelectric Tunnel Junction Based on Asymmetric Barrier-Well-Barrier Structure: The Role of Resonant Tunneling,”IEEE Transactions on Electron Devices, vol. 70, no. 5, pp. 2282-2290,May. 2023.
10.PengyingChang, Gang Du,JinfengKang,and Xiaoyan Liu*, “Guidelines for Ferroelectric-Semiconductor Tunnel Junction Optimization by Band Structure Engineering,”IEEE Transactions on Electron Devices,10.1109/TED.2021.3079881,May 2021.
11.Mengqi Fan,Pengying Chang*（通讯作者）, Gang Du, Jinfeng Kang, and Xiaoyan Liu, “Impacts of Radius on the Characteristics of Cylindrical Ferroelectric Capacitors,”IEEE Transactions on Electron Devices, vol. 67, no. 12, pp. 5810-5814, Dec. 2020.
12.Pengying Chang, Xiaoyan Liu*, Shaoyan Di, and Gang Du, “Evaluation of Ballistic Transport in III-V Based p-Channel MOSFETs,”IEEE Transactions on Electron Devices, vol. 64, no. 3, pp. 1053-1059, Mar. 2017.
13.Pengying Chang, Xiaoyan Liu*, Lang Zeng, Kangliang Wei, and Gang Du, “Investigation of Hole Mobility in Strained InSb Ultra-Thin Body pMOSFET,”IEEE Transactions on Electron Devices, vol. 62, no. 3, pp. 947-954, Mar. 2015.
部分会议论文：
1.Xinrui Guo, Jiying Xiao, Kunpeng Si, Yu Zhu, Shuo Liu, YOngji Gong, Meng Li,Pengying Chang*（共同通讯作者）, Lang Zeng*, Ming He*,“Synergistic Ferroelectric-Photoelectric Multiple Polarization Encryptions withN128Key Spaces in-situα-In2Se3/Bi2O2Se Heterostructure Phototransistors,”International Electron Devices Meeting(IEDM), Dec. 2025.
2.Linlin Cai, Wangyong Chen,Pengying Chang*（共同通讯作者）, Gang Du, Xing Zhang,Jinfeng Kang, and Xiaoyan Liu*, “A Physics-based Thermal Model of Nanosheet MOSFETs for Device-Circuit Co-design,”International Electron Devices Meeting(IEDM), pp. 779-782,2018.
3.Pengying Chang, Xiaoyan Liu*, Gang Du, and Xing Zhang, “Assessment of Hole Mobility in Strained InSb, GaSb and InGaSb Based Ultra-Thin Body pMOSFETs with Different Surface Orientations,”International Electron Devices Meeting(IEDM), pp. 192-195,2014.
4.Wangyong Chen, Yun Li, Linlin Cai,Pengying Chang, Gang Du*, and Xiaoyan Liu*, “Entire Bias Space Statistical Reliability Simulation By 3D-KMC Method and Its Application to the Reliability Assessment of Nanosheet FETs based Circuits,”International Electron Devices Meeting(IEDM), pp. 775-778,2018.
5.Pengying Chang, Lang Zeng, Xiaoyan Liu*, and Gang Du, “Hole Mobility in InSb-Based Devices: Dependency on Surface Orientation, Body Thickness and Strain,”The 44thEuropean Solid-State Devices Research Conference(ESSDERC), pp. 122-125, 2014.
