基本情况
朱慧，博士，教授/博导。2011年毕业于英国剑桥大学，获博士学位，同年加入2138cc太阳集团从事教学科研工作。多年来一直致力于新型半导体器件及可靠性的研究，作为项目负责人先后主持国家自然科学基金面上项目、青年项目、国家重点研发计划子课题、教育部博士点基金、北京市基金面上项目、北京市教委科技项目等；发表SCI论文30余篇，其中近五年以第一作者/通讯作者在APL、IEEE TIM、IEEE TED等专业领域权威期刊发表SCI论文10余篇。担任Advanced Devices & Instrumentation期刊编委，Advanced Materials, IEEE TPE/EDL等重要学术刊物审稿人，获得北京市科学技术奖-技术发明二等奖，中国电子学会科学技术奖-技术发明二等奖。
代表性论文
1.Pan S, Zhu H*，et al,Trapping behaviors in CNTFETs: measurement and analysis of time constant, energy Level, and trap location based on transient drain current,IEEE Transactions on Instrumentation and Measurement2025, 74: 1007014.
2.Xu C, Zhu H*, et al,Investigation of vacuum pumping and gate bias stress effects on electrical performance and trap characteristics in bottom-gated CNT FETs,ACS Applied Electronic Materials2025, 7: 6761.
3.Zhang Y, Zhu H*, et al,Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices,Applied Physics Letters2024,125: 032101.
4.Li Y, Zhu H*, et al, Trap characteristics of hafnium oxide based ferroelectric field-effect transistors measured by using a current transient method,Applied Physics Letters2023,122: 112905.
5. Xie N, Zhu H*, et al,Effects of static and repetitive uniaxial bending strains on the electrical properties and trap characteristics of flexible low-temperature polysilicon thin-film transistors,IEEE Transactions on Electron Devices2023, 70: 544.
