期刊论文：

1.Pengying Chang, Gang Du, Jinfeng Kang, and Xiaoyan Liu*, “Conduction Mechanisms of Metal-Ferroelectric-Insulator-Semiconductor Tunnel Junction on N- and P-Type Semiconductor,”IEEE Electron Device Letters, vol. 42, no. 1, pp. 119-121, Jan. 2021.

2.Pengying Chang*, Xiaoyan Liu, Fei Liu, and Gang Du, “Phonon-Limited Mobility in n-Type Few-Layer InSe Devices From First Principles,”IEEE Electron Device Letters, vol. 40, no. 2, pp. 333-336, Feb.2019.

3.Pengying Chang, Gang Du, and Xiaoyan Liu*, “Design space for stabilized negative capacitance in HfO₂ferroelectric-dielectric stacks based on phase field simulation,”Science China: Information Sciences, vol. 64, no. 2, pp. 122402, Jan. 2021.

4.Pengying Chang, Gang Du, Jinfeng Kang, and Xiaoyan Liu*, “Guidelines for Ferroelectric-Semiconductor Tunnel Junction Optimization by Band Structure Engineering,”IEEE Transactions on Electron Devices, 10.1109/TED.2021. ****9881, May 2021.

5.Mengqi Fan,Pengying Chang*, Gang Du, Jinfeng Kang, and Xiaoyan Liu, “Impacts of Radius on the Characteristics of Cylindrical Ferroelectric Capacitors,”IEEE Transactions on Electron Devices, vol. 67, no. 12, pp. 5810-5814, Dec. 2020.

6.Pengying Chang, Xiaoyan Liu*, Shaoyan Di, and Gang Du, “Evaluation of Ballistic Transport in III-V Based p-Channel MOSFETs,”IEEE Transactions on Electron Devices, vol. 64, no. 3, pp. 1053-1059, Mar. 2017.

7.Pengying Chang, Xiaoyan Liu*, Shaoyan Di, and Gang Du, “Evaluation of Ballistic Transport in III-V Based p-Channel MOSFETs,”IEEE Transactions on Electron Devices, vol. 64, no. 3, pp. 1053-1059, Mar. 2017.

8.Pengying Chang, Xiaoyan Liu*, Lang Zeng, Kangliang Wei, and Gang Du, “Investigation of Hole Mobility in Strained InSb Ultra-Thin Body pMOSFET,”IEEE Transactions on Electron Devices, vol. 62, no. 3, pp. 947-954, Mar. 2015.

会议论文：

1.Linlin Cai, Wangyong Chen,Pengying Chang*, Gang Du, Xing Zhang, Jinfeng Kang, and Xiaoyan Liu*, “A Physics-based Thermal Model of Nanosheet MOSFETs for Device-Circuit Co-design,”International Electron Devices Meeting(IEDM), pp. 779-782,2018.

2.Pengying Chang, Xiaoyan Liu*, Gang Du, and Xing Zhang, “Assessment of Hole Mobility in Strained InSb, GaSb and InGaSb Based Ultra-Thin Body pMOSFETs with Different Surface Orientations,”International Electron Devices Meeting(IEDM), pp. 192-195,2014.

3.Pengying Chang, Lang Zeng, Xiaoyan Liu*, and Gang Du, “Hole Mobility in InSb-Based Devices: Dependency on Surface Orientation, Body Thickness and Strain,”The 44^thEuropean Solid-State Devices Research Conference(ESSDERC), pp. 122-125, 2014.

4.Wangyong Chen, Yun Li, Linlin Cai,Pengying Chang, Gang Du*, and Xiaoyan Liu*, “Entire Bias Space Statistical Reliability Simulation By 3D-KMC Method and Its Application to the Reliability Assessment of Nanosheet FETs based Circuits,”International Electron Devices Meeting(IEDM), pp. 775-778,2018.

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