代表性研究成果
(第一作者或通讯作者)
Yun Tang, et al. Comparison of Proton Irradiation Effects on Electrical Properties of Quasi-Vertical and Lateral GaN Schottky Barrier Diodes [J]. IEEE Transactions on Nuclear Science, 2025, 72(1):17-23.
X. Zhou,Yun. Tang*, et al. SiC MOSFET With Embedded Polysilicon Diode for Improved Short-Circuit Capability and Electrical Characteristics [J]. IEEE Electron Device Letters, vol 46, no. 11, pp. 1942-1945, Nov, 2025.
Yun Tang, et al. Synergistic Effect of Negative Bias Instability and Total Ionizing Dose on SiC MOSFETs [J]. IEEE Transactions on Nuclear Science, 2023, 70(8): 1990-1994.
Yun Tang, et al. Investigation on performance degradation mechanism of GaN p-i-n diode under proton irradiation [J]. Applied Physics Letters, 2023, 122: 022101-1-022101-6.
Yun Tang, et al. Evolution and Mechanism of P-GaN Films Under Proton Irradiation and Its Influence on Electronic Device [J]. IEEE Transactions on Nuclear Science, 2022, 69(3):225-231.
X. Zhou,Yun. Tang*,et al.Single-Event Effects in SiC Double-Trench MOSFETs [J].IEEE Transactions on Nuclear Science, vol. 66, no. 11, pp. 2312-2318, Nov. 2019.
